Please use this identifier to cite or link to this item: http://hdl.handle.net/10316/24817
Title: Pulsed direct current magnetron sputtered nanocrystalline tin oxide films
Authors: Reddy, A. Sivasankar 
Figueiredo, N. M. 
Cavaleiro, A. 
Keywords: Oxides; Thin films; Sputtering; Electrical; Optical
Issue Date: Sep-2012
Publisher: Elsevier
Citation: REDDY, A. Sivasankar; FIGUEIREDO, N. M.; CAVALEIRO, A. - Pulsed direct current magnetron sputtered nanocrystalline tin oxide films. "Applied Surface Science". ISSN 0169-4332.258:22 (2012) 8902-8907
Serial title, monograph or event: Applied Surface Science
Volume: 258
Issue: 22
Abstract: The nanocrystalline tin oxide (SnO2) films were deposited on glass substrates by pulsed magnetron sputtering technique and subsequently annealed from 200 to 500 °C. The structural, microstructural, electrical, and optical properties of as deposited and annealed SnO2 films were studied. The crystallinity degree of the films increased with annealing temperature. Photoluminescence (PL) measurements showed that the emission peaks have low intensity and are positioned at 535 nm (2.31 eV) and 605 nm (2.05 eV) in as deposited SnO2 films. The intensity of PL peak increases sharply with the increasing of annealing temperature. The as deposited films exhibited high electrical resistivity and low optical transmittance. After annealing at 500 °C, the electrical resistivity of the films decreased to the lowest value of 0.015 Ω cm, being the optical transmittance 90%.
URI: http://hdl.handle.net/10316/24817
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.05.112
Rights: openAccess
Appears in Collections:I&D CEMUC - Artigos em Revistas Internacionais
FCTUC Eng.Mecânica - Artigos em Revistas Internacionais

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