Please use this identifier to cite or link to this item: http://hdl.handle.net/10316/4321
Title: The oxidation behaviour of mixed tungsten silicon sputtered coatings
Authors: Louro, C. 
Cavaleiro, A. 
Keywords: Oxidation resistance; Suicides; W-Si-N films; Tungsten silicide; Sputtering
Issue Date: 1999
Citation: Thin Solid Films. 343-344:(1999) 51-56
Abstract: W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings.
URI: http://hdl.handle.net/10316/4321
Rights: openAccess
Appears in Collections:FCTUC Eng.Mecânica - Artigos em Revistas Internacionais

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