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Title: Shallow-level muonium centre in CdS
Authors: Gil, J. M. 
Alberto, H. V. 
Vilão, R. C. 
Duarte, J. Piroto 
Mendes, P. J. 
Campos, N. Ayres de 
Weidinger, A. 
Krauser, J. 
Niedermayer, Ch. 
Cox, S. F. J. 
Keywords: II-VI semiconductors; Hydrogen-like defects; Muonium states
Issue Date: 2000
Citation: Physica B: Condensed Matter. 289-290:(2000) 563-566
Abstract: A new type of muonium defect centre has been observed in undoped CdS at low temperatures (T<20 K). The hyperfine parameters are A[short parallel]=335 (7) kHz and A[perpendicular]=199 (6) kHz (approximately 10-4 of the vacuum value) with the symmetry axis along the Cd-S bond direction. The disappearance of the centre at around 20 K is in agreement with the binding energy of a shallow centre. The extremely weak hyperfine interaction implies that the electron is only weakly bound to the muon and is distributed over a large complex of atoms in the neighborhood of the muon resembling the dilated hydrogen-like wave functions of shallow centres in a dielectric medium. Comparing the hyperfine interaction with that of free muonium, a Bohr radius of ad=26a0=1.4 nm is calculated for this defect, with a0 being the Bohr radius for the free muonium.
Rights: openAccess
Appears in Collections:FCTUC Física - Artigos em Revistas Internacionais

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