Please use this identifier to cite or link to this item: http://hdl.handle.net/10316/4485
Title: Muon diffusion and trapping in chalcopyrite semiconductors
Authors: Vilão, R. C. 
Gil, J. M. 
Alberto, H. V. 
Duarte, J. Piroto 
Campos, N. Ayres de 
Weidinger, A. 
Yakushev, M. V. 
Cox, S. F. J. 
Keywords: Muon diffusion; Muon trapping; Chalcopyrite semiconductors; Structural defects
Issue Date: 2003
Citation: Physica B: Condensed Matter. 326:1-4 (2003) 181-184
Abstract: The diffusion parameters of diamagnetic muons in chalcopyrites CuInSe2, CuInS2, CuInTe2, CuGaTe2 and (Ag0.25Cu0.75)InSe2 were obtained by [mu]SR methods. The variations among the different compositions were found to validate the anion-antibonding localization model. The application of a two-state model to the zero-field data revealed muon trapping by defects. The dipolar width at the trap and the number of jumps before trapping were determined. The Cu vacancy is identified as the trapping center in CuInSe2 and the energy depth of the trap has been determined.
URI: http://hdl.handle.net/10316/4485
Rights: openAccess
Appears in Collections:FCTUC Física - Artigos em Revistas Internacionais

Files in This Item:
File Description SizeFormat
file1f68d837dd18449789dde838128efc1e.pdf99.87 kBAdobe PDFView/Open
Show full item record

Page view(s)

193
checked on Dec 4, 2019

Download(s)

72
checked on Dec 4, 2019

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.