Please use this identifier to cite or link to this item: http://hdl.handle.net/10316/4386
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dc.contributor.authorGordo, P. M.-
dc.contributor.authorMarques, M. F. Ferreira-
dc.contributor.authorGil, C. Lopes-
dc.contributor.authorLima, A. P. de-
dc.contributor.authorLavareda, G.-
dc.contributor.authorCarvalho, C. Nunes de-
dc.contributor.authorAmaral, A.-
dc.contributor.authorKajcsos, Zs.-
dc.date.accessioned2008-09-01T11:06:14Z-
dc.date.available2008-09-01T11:06:14Z-
dc.date.issued2007en_US
dc.identifier.citationRadiation Physics and Chemistry. 76:2 (2007) 220-223en_US
dc.identifier.urihttp://hdl.handle.net/10316/4386-
dc.description.abstractDefect structure of hydrogenated amorphous silicon thin-films was studied by positron annihilation spectroscopy (PAS), whereas the density of states below the Fermi level was measured by constant photocurrent method (CPM). Divacancies and large vacancy clusters were identified as the main defects present in these films, with relative concentrations strongly dependent on the rf-power. Correlation between PAS, CPM results and I(V) characteristics of solar cells suggests the creation of energy levels above the Fermi energy, not observable by CPM, related to large vacancy clusters.en_US
dc.description.urihttp://www.sciencedirect.com/science/article/B6TVT-4JX373P-2/1/af7c69b0fdf17cefb2432fb357d5d86fen_US
dc.format.mimetypeaplication/PDFen
dc.language.isoengeng
dc.rightsopenAccesseng
dc.subjectVariable-energy positron annihilationen_US
dc.subjectDoppler broadeningen_US
dc.subjectConstant photocurrent methoden_US
dc.subjectDefectsen_US
dc.subjectDensity of statesen_US
dc.titlePositron annihilation and constant photocurrent method measurements on a-Si:H films: A comparative approach to defect identificationen_US
dc.typearticleen_US
item.languageiso639-1en-
item.fulltextCom Texto completo-
item.grantfulltextopen-
Appears in Collections:FCTUC Física - Artigos em Revistas Internacionais
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