Please use this identifier to cite or link to this item:
https://hdl.handle.net/10316/4333
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gordo, P. M. | - |
dc.contributor.author | Liszkay, L. | - |
dc.contributor.author | Kajcsos, Zs. | - |
dc.contributor.author | Havancsák, K. | - |
dc.contributor.author | Skuratov, V. A. | - |
dc.contributor.author | Kögel, G. | - |
dc.contributor.author | Sperr, P. | - |
dc.contributor.author | Egger, W. | - |
dc.contributor.author | Lima, A. P. de | - |
dc.contributor.author | Marques, M. F. Ferreira | - |
dc.date.accessioned | 2008-09-01T11:05:18Z | - |
dc.date.available | 2008-09-01T11:05:18Z | - |
dc.date.issued | 2008-09-01T11:05:18Z | - |
dc.identifier.citation | Applied Surface Science. In Press, Corrected Proof: | en_US |
dc.identifier.uri | https://hdl.handle.net/10316/4333 | - |
dc.description.abstract | Sapphire samples, irradiated with swift Kr (245 MeV) ions at room temperature in a broad fluence range, were investigated using a continuous and a pulsed positron beam to study the defect structure created by the passage of the ions in depths of a few micrometers. At small doses, monovacancies were identified as dominant defects and positron trapping centres. These monovacancies are assumed to be highly concentrated inside a cylindrical volume around the ion path with an estimated radius of ~1.5 nm. For higher doses a second type of trapping centre emerges. This second class of structural imperfection was associated with the overlap of the individual ion tracks leading to the formation of larger vacancy clusters or voids. | en_US |
dc.description.uri | http://www.sciencedirect.com/science/article/B6THY-4SHF49N-1S/1/3eb43650299e0466e76cbbbfdaca9fad | en_US |
dc.format.mimetype | aplication/PDF | en |
dc.language.iso | eng | eng |
dc.rights | openAccess | eng |
dc.subject | Sapphire | en_US |
dc.subject | Positron lifetimes | en_US |
dc.subject | Doppler broadening | en_US |
dc.subject | Defects | en_US |
dc.subject | Positron trapping | en_US |
dc.title | On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range | en_US |
dc.type | article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2008.05.185 | - |
uc.controloAutoridade | Sim | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.grantfulltext | open | - |
item.openairetype | article | - |
item.languageiso639-1 | en | - |
item.fulltext | Com Texto completo | - |
item.cerifentitytype | Publications | - |
crisitem.author.researchunit | CFisUC – Center for Physics of the University of Coimbra | - |
crisitem.author.orcid | 0000-0002-8679-8134 | - |
Appears in Collections: | FCTUC Física - Artigos em Revistas Internacionais |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
file4101581100924b3c9290a89972da6f4d.pdf | 247.94 kB | Adobe PDF | View/Open |
SCOPUSTM
Citations
10
checked on Aug 19, 2024
WEB OF SCIENCETM
Citations
9
checked on Aug 2, 2024
Page view(s) 50
490
checked on Aug 27, 2024
Download(s)
270
checked on Aug 27, 2024
Google ScholarTM
Check
Altmetric
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.